- Series :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
-
- 1.08V @ 60A (2)
- 1.17V @ 80A (2)
- 1.25V @ 60A (2)
- 1.25V @ 80A (4)
- 1.3V @ 60A (4)
- 1.41V @ 30A (10)
- 1.4V @ 60A (6)
- 1.55V @ 15A (2)
- 1.55V @ 20A (2)
- 1.55V @ 30A (2)
- 1.68V @ 60A (2)
- 1.75V @ 10A (6)
- 1.75V @ 12A (4)
- 1.75V @ 16A (4)
- 1.75V @ 20A (4)
- 1.75V @ 30A (2)
- 1.75V @ 50A (2)
- 1.75V @ 6A (8)
- 1.75V @ 8A (6)
- 1.7V @ 10A (4)
- 1.7V @ 60A (2)
- 2.8V @ 30A (2)
- 500mV @ 65A (2)
- 830mV @ 30A (6)
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
55 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ROHM Semiconductor | DIODE GEN PURP 600V 15A TO247 | TO-247-3 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247 | Standard | 600V | 2.8V @ 30A | 35ns | 10µA @ 600V | 150°C (Max) | 15A | - | ||||
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ROHM Semiconductor | DIODE GEN PURP 600V 30A TO247 | TO-247-3 | - | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247 | Standard | 600V | 1.55V @ 30A | 60ns | 10µA @ 600V | 150°C (Max) | 30A | - | ||||
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ROHM Semiconductor | DIODE SILICON 650V 20A TO247 | TO-247-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247 | Silicon Carbide Schottky | 650V | 1.55V @ 20A | 0ns | 400µA @ 600V | 175°C (Max) | 20A | 730pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 1200V 10A TO247 | TO-247-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247 | Silicon Carbide Schottky | 1200V | - | 0ns | - | 175°C (Max) | 10A (DC) | - | ||||
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ROHM Semiconductor | DIODE SILICON 650V 15A TO247 | TO-247-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247 | Silicon Carbide Schottky | 650V | 1.55V @ 15A | 0ns | 300µA @ 600V | 175°C (Max) | 15A | 550pF @ 1V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY 150V TO247AD | TO-247-3 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247AD | Schottky | 150V | 830mV @ 30A | - | 100µA @ 150V | -55°C ~ 175°C | - | 820pF @ 5V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY 150V TO247AD | TO-247-3 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247AD | Schottky | 150V | 830mV @ 30A | - | 100µA @ 150V | -55°C ~ 175°C | - | 820pF @ 5V, 1MHz | ||||
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ON Semiconductor | 650V 30A SIC SBD | TO-247-3 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 175°C | 23A (DC) | 887pF @ 1V, 100kHz | ||||
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ON Semiconductor | 1200V 20A AUTO SIC SBD | TO-247-3 | Automotive, AEC-Q101 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 1200V | - | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 15A (DC) | 612pF @ 1V, 100kHz | ||||
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ON Semiconductor | 650V 20A SIC SBD | TO-247-3 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 175°C | 13A (DC) | 575pF @ 1V, 100kHz | ||||
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ON Semiconductor | 650V 16A SIC SBD | TO-247-3 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 175°C | 11A (DC) | 463pF @ 1V, 100kHz | ||||
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ON Semiconductor | 650V 20A SIC SBD GEN1.5 | TO-247-3 | Automotive, AEC-Q101 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | 1.7V @ 10A | 0ns | 40µA @ 650V | -55°C ~ 175°C | 10A (DC) | 421pF @ 1V, 100kHz | ||||
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ON Semiconductor | 650V 8A SIC SBD | TO-220-2 Full Pack | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220F-2FS | Silicon Carbide Schottky | 650V | 1.75V @ 8A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 8A (DC) | 463pF @ 1V, 100kHz | ||||
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ON Semiconductor | 650V 8A SIC SBD | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | D-PAK (TO-252) | Silicon Carbide Schottky | 650V | 1.75V @ 8A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 15A (DC) | 463pF @ 1V, 100kHz | ||||
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ON Semiconductor | 650V 6A SIC SBD | TO-220-2 Full Pack | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220F-2FS | Silicon Carbide Schottky | 650V | 1.75V @ 6A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 6A (DC) | 361pF @ 1V, 100kHz | ||||
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ON Semiconductor | 650V 6A SIC SBD | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | D-PAK (TO-252) | Silicon Carbide Schottky | 650V | 1.75V @ 6A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 11A (DC) | 361pF @ 1V, 100kHz | ||||
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ON Semiconductor | DIODE GEN PURP 400V 60A TO247 | TO-247-3 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247 | Standard | 400V | 1.3V @ 60A | 85ns | 100µA @ 400V | -65°C ~ 150°C | 60A | - | ||||
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ON Semiconductor | DIODE SCHOTTKY 650V TO220-2 | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 650V | 1.75V @ 6A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 8.8A (DC) | 361pF @ 1V, 100kHz | ||||
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ON Semiconductor | 650V 10A SIC SBD | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | D-PAK (TO-252) | Silicon Carbide Schottky | 650V | 1.75V @ 10A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 18A (DC) | 575pF @ 1V, 100kHz | |||||
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ON Semiconductor | 650V 50A SIC SBD | TO-247-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 650V | 1.75V @ 50A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 60A (DC) | 2530pF @ 1V, 100kHz | ||||
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ON Semiconductor | 650V 30A SIC SBD | TO-247-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 175°C | 26A (DC) | 1705pF @ 1V, 100kHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 650V 30A TO220-2 | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 650V | 1.75V @ 30A | - | 200µA @ 650V | -55°C ~ 175°C | 30A (DC) | 1705pF @ 1V, 100kHz | ||||
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ON Semiconductor | 650V 20A SIC SBD | TO-247-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 175°C | 25A (DC) | 1085pF @ 1V, 100kHz | ||||
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ON Semiconductor | 650V 20A SIC SBD | TO-220-2 Full Pack | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220F-2FS | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 175°C | 20A (DC) | 1085pF @ 1V, 100kHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 650V 25A TO220-2 | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2 | Silicon Carbide Schottky | 650V | 1.75V @ 20A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 25A (DC) | 1085pF @ 1V, 100kHz | ||||
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ON Semiconductor | 650V 16A SIC SBD | TO-247-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 150°C | 23A (DC) | 887pF @ 1V, 100kHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 650V 16A TO220-2 | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2 | Silicon Carbide Schottky | 650V | 1.75V @ 16A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 16A (DC) | 887pF @ 1V, 100kHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 650V 15A TO220-2 | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 650V | 1.75V @ 12A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 15A (DC) | 665pF @ 1V, 100kHz | ||||
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ON Semiconductor | 650V 10A SIC SBD | TO-220-2 Full Pack | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220F-2FS | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 175°C | 10A (DC) | 575pF @ 1V, 100kHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 650V 15A TO220-2 | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 650V | 1.75V @ 10A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 15A (DC) | 575pF @ 1V, 100kHz |