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Supplier Device Package :
Voltage - DC Reverse (Vr) (Max) :
Voltage - Forward (Vf) (Max) @ If :
Reverse Recovery Time (trr) :
Current - Reverse Leakage @ Vr :
Operating Temperature - Junction :
Current - Average Rectified (Io) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Packaging Speed Mounting Type Part Status Supplier Device Package Diode Type Voltage - DC Reverse (Vr) (Max) Voltage - Forward (Vf) (Max) @ If Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Operating Temperature - Junction Current - Average Rectified (Io) Capacitance @ Vr, F
BA9040F-WE2
Per Unit
$0.8085
RFQ
ROHM Semiconductor DIODE GEN PURP 600V 10A TO220NFM TO-220-2 Bulk Fast Recovery =< 500ns, > 200mA (Io) Through Hole Not For New Designs TO-220NFM Standard 600V 2.8V @ 10A 25ns 10µA @ 600V 150°C (Max) 10A -
BA5918FP
Per Unit
$5.3000
RFQ
ROHM Semiconductor SHORTER RECOVERY TIME, ENABLING TO-220-2 - No Recovery Time > 500mA (Io) Through Hole Active TO-220ACP Silicon Carbide Schottky 650V 1.5V @ 8A 0ns 40µA @ 650V 175°C (Max) 8A (DC) 400pF @ 1V, 1MHz
BA5917FP-E2
Per Unit
$4.5000
RFQ
ROHM Semiconductor DIODE SC SCHKY 650V 8A TO220ACP TO-220-2 Tube No Recovery Time > 500mA (Io) Through Hole Active - Silicon Carbide Schottky 650V 1.5V @ 8A 0ns 40µA @ 650V 175°C (Max) 8A (DC) 400pF @ 1V, 1MHz
SCS308AHGC9
Per Unit
$5.3000
RFQ
ROHM Semiconductor SHORTER RECOVERY TIME, ENABLING TO-220-2 - No Recovery Time > 500mA (Io) Through Hole Active TO-220ACP Silicon Carbide Schottky 650V 1.5V @ 8A 0ns 40µA @ 650V 175°C (Max) 8A (DC) 400pF @ 1V, 1MHz
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