- Manufacture :
- Series :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Reverse Recovery Time (trr) :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ON Semiconductor | DIODE GEN PURP 600V 8A TO277-3 | TO-277, 3-PowerDFN | Automotive, AEC-Q101 | Standard Recovery >500ns, > 200mA (Io) | Surface Mount | Active | TO-277-3 | Standard | 600V | 1.1V @ 8A | 3.37µs | 5µA @ 600V | -55°C ~ 150°C | 8A | 118pF @ 0V, 1MHz | |||||
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Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 100V 8A TO277A | TO-277, 3-PowerDFN | eSMP® | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | TO-277A (SMPC) | Schottky | 100V | 900mV @ 8A | - | 2µA @ 100V | -55°C ~ 175°C | 8A | 140pF @ 4V, 1MHz | |||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 4A TO277A | TO-277, 3-PowerDFN | eSMP® | Standard Recovery >500ns, > 200mA (Io) | Surface Mount | Discontinued at Digi-Key | TO-277A (SMPC) | Standard | 600V | 1.1V @ 4A | 2.5µs | 10µA @ 600V | -55°C ~ 150°C | 4A | 30pF @ 4V, 1MHz |