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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Power - Max | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | FET Feature | |
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NXP USA Inc. | MOSFET 2N-CH 20V 3.9A HUSON6 | 6-UDFN Exposed Pad | - | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | DFN2020-6 | 2 N-Channel (Dual) | 510mW | 20V | 185pF @ 10V | 3.9A | 50 mOhm @ 3.9A, 4.5V | 1V @ 250µA | 3.5nC @ 4.5V | Logic Level Gate |