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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Power - Max Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs FET Feature
SI4967DY-T1-GE3
RFQ
Vishay Siliconix MOSFET 2P-CH 12V 8SOIC 8-SOIC (0.154", 3.90mm Width) TrenchFET® Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 2 P-Channel (Dual) 2W 12V - 23 mOhm @ 7.5A, 4.5V 450mV @ 250µA (Min) 55nC @ 10V Logic Level Gate
SI4967DY-T1-E3
RFQ
Vishay Siliconix MOSFET 2P-CH 12V 8SOIC 8-SOIC (0.154", 3.90mm Width) TrenchFET® Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 2 P-Channel (Dual) 2W 12V - 23 mOhm @ 7.5A, 4.5V 450mV @ 250µA (Min) 55nC @ 10V Logic Level Gate
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