1 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Power - Max | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | FET Feature | |
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Infineon Technologies | MOSFET 2N-CH 20V 6.6A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 2 N-Channel (Dual) | 2W | 20V | 900pF @ 15V | 6.6A | 29 mOhm @ 6A, 4.5V | 700mV @ 250µA | 27nC @ 4.5V | Logic Level Gate |