2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Power - Max | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | FET Feature | |
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Infineon Technologies | MOSFET N/P-CH 100V 2.1A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | N and P-Channel | 2W | 100V | 380pF @ 25V | 2.1A, 1.5A | 210 mOhm @ 2.1A, 10V | 4V @ 250µA | 28nC @ 10V | Standard | |||||
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Infineon Technologies | MOSFET N/P-CH 100V 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | N and P-Channel | 2W | 100V | 380pF @ 25V | 2.1A, 1.5A | 210 mOhm @ 2.1A, 10V | 4V @ 250µA | 28nC @ 10V | Standard |