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Current - Continuous Drain (Id) @ 25°C :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Power - Max Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs FET Feature
SI4910DY-T1-GE3
RFQ
Vishay Siliconix MOSFET 2N-CH 40V 7.6A 8-SOIC 8-SOIC (0.154", 3.90mm Width) TrenchFET® Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 2 N-Channel (Dual) 3.1W 40V 855pF @ 20V 7.6A 27 mOhm @ 6A, 10V 2V @ 250µA 32nC @ 10V Standard
SI4910DY-T1-E3
RFQ
Vishay Siliconix MOSFET 2N-CH 40V 7.6A 8-SOIC 8-SOIC (0.154", 3.90mm Width) TrenchFET® Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 2 N-Channel (Dual) 3.1W 40V 855pF @ 20V 7.6A 27 mOhm @ 6A, 10V 2V @ 250µA 32nC @ 10V Standard
SI4569DY-T1-E3
RFQ
Vishay Siliconix MOSFET N/P-CH 40V 7.6A 8-SOIC 8-SOIC (0.154", 3.90mm Width) TrenchFET® Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO N and P-Channel 3.1W, 3.2W 40V 855pF @ 20V 7.6A, 7.9A 27 mOhm @ 6A, 10V 2V @ 250µA 32nC @ 10V Standard
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