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Power - Max :
Current - Continuous Drain (Id) @ 25°C :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Power - Max Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs FET Feature
SI4923DY-T1-GE3
RFQ
Vishay Siliconix MOSFET 2P-CH 30V 6.2A 8-SOIC 8-SOIC (0.154", 3.90mm Width) TrenchFET® Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 2 P-Channel (Dual) 1.1W 30V - 6.2A 21 mOhm @ 8.3A, 10V 3V @ 250µA 70nC @ 10V Logic Level Gate
SI4923DY-T1-E3
RFQ
Vishay Siliconix MOSFET 2P-CH 30V 6.2A 8-SOIC 8-SOIC (0.154", 3.90mm Width) TrenchFET® Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 2 P-Channel (Dual) 1.1W 30V - 6.2A 21 mOhm @ 8.3A, 10V 3V @ 250µA 70nC @ 10V Logic Level Gate
SI4941EDY-T1-E3
RFQ
Vishay Siliconix MOSFET 2P-CH 30V 10A 8-SOIC 8-SOIC (0.154", 3.90mm Width) TrenchFET® Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 2 P-Channel (Dual) 3.6W 30V - 10A 21 mOhm @ 8.3A, 10V 2.8V @ 250µA 70nC @ 10V Logic Level Gate
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