- Manufacture :
- Series :
- Part Status :
- Input Capacitance (Ciss) (Max) @ Vds :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- FET Feature :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Power - Max | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | FET Feature | |
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STMicroelectronics | MOSFET 2N-CH 20V 5A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | STripFET™ II | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 2 N-Channel (Dual) | 2W | 20V | 460pF @ 25V | 5A | 40 mOhm @ 2.5A, 4.5V | 600mV @ 250µA | 11.5nC @ 4.5V | Logic Level Gate | |||||
-Exposed-Pad.jpg)
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Taiwan Semiconductor Corporation | MOSFET 2 N-CHANNEL 20V 6A 8SOP | 8-SOIC (0.154", 3.90mm Width) | - | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SOP | 2 N-Channel (Dual) | 1.6W | 20V | 562pF @ 8V | 6A (Tc) | 30 mOhm @ 6A, 10V | 600mV @ 250µA | 7.1nC @ 4.5V | Standard |