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Power - Max :
Input Capacitance (Ciss) (Max) @ Vds :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Power - Max Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs FET Feature
ZXMN2A04DN8TC
RFQ
Diodes Incorporated MOSFET 2N-CH 20V 5.9A 8SOIC 8-SOIC (0.154", 3.90mm Width) - Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SOP 2 N-Channel (Dual) 1.8W 20V 1880pF @ 10V 5.9A 25 mOhm @ 5.9A, 4.5V 700mV @ 250µA (Min) 22.1nC @ 5V Logic Level Gate
ZXMD65P02N8TC
RFQ
Diodes Incorporated MOSFET 2P-CH 20V 4A 8SOIC 8-SOIC (0.154", 3.90mm Width) - Surface Mount - Obsolete 8-SOP 2 P-Channel (Dual) 1.75W 20V 960pF @ 15V 4A 50 mOhm @ 2.9A, 4.5V 700mV @ 250µA (Min) 20nC @ 4.5V Standard
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