- Packaging :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- FET Feature :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Power - Max | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | FET Feature | |
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Infineon Technologies | MOSFET N/P-CH 30V 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | N and P-Channel | 2W | 30V | 650pF @ 25V | 6.5A, 4.9A | 29 mOhm @ 5.8A, 10V | 3V @ 250µA | 33nC @ 10V | Logic Level Gate | |||||
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Infineon Technologies | MOSFET 2N-CH 30V 6.5A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Cut Tape (CT) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 2 N-Channel (Dual) | 2W | 30V | 650pF @ 25V | 6.5A | 29 mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | Standard | |||||
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Infineon Technologies | MOSFET N/P-CH 30V 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | N and P-Channel | 2.5W | 30V | 650pF @ 25V | - | 29 mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | Logic Level Gate | ||||||
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Infineon Technologies | MOSFET N/P-CH 30V 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | N and P-Channel | 2.5W | 30V | 650pF @ 25V | - | 29 mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | Logic Level Gate |