1 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 4.5A VS6 2-3T1A | SOT-23-6 Thin, TSOT-23-6 | U-MOSIV | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Obsolete | VS-6 (2.9x2.8) | P-Channel | 20V | 680pF @ 10V | 700mW (Ta) | 4.5A (Ta) | 2V, 4.5V | 55 mOhm @ 2.2A, 4.5V | 1.2V @ 200µA | 9.8nC @ 5V | ±12V | - |