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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max)
2SJ681(Q)
RFQ
Toshiba Semiconductor and Storage MOSFET P-CH 60V 5A PW-MOLD TO-251-3 Stub Leads, IPak - Bulk MOSFET (Metal Oxide) Through Hole 150°C (TJ) Obsolete PW-MOLD2 P-Channel 60V 700pF @ 10V 20W (Ta) 5A (Ta) 4V, 10V 170 mOhm @ 2.5A, 10V 2V @ 1mA 15nC @ 10V ±20V
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