- Packaging :
- Part Status :
- Supplier Device Package :
- FET Type :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Toshiba Semiconductor and Storage | MOSFET N-CH 500V 12A TO220SM | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Obsolete | TO-220SM | N-Channel | 500V | 2040pF @ 10V | 100W (Tc) | 12A (Ta) | 10V | 520 mOhm @ 6A, 10V | 4V @ 1mA | 45nC @ 10V | ±30V | ||||||
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Toshiba Semiconductor and Storage | MOSFET P-CH 30V 10A 8-SOP | 8-SOIC (0.173", 4.40mm Width) | - | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Discontinued at Digi-Key | 8-SOP (5.5x6.0) | P-Channel | 30V | 2260pF @ 10V | 1W (Ta) | 10A (Ta) | 4V, 10V | 20 mOhm @ 5A, 10V | 2V @ 1mA | 45nC @ 10V | ±20V |