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- Packaging :
- Operating Temperature :
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- FET Type :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 2.5A TSM | TO-236-3, SC-59, SOT-23-3 | U-MOSIV | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Discontinued at Digi-Key | TSM | N-Channel | 60V | 235pF @ 30V | 700mW (Ta) | 2.5A (Ta) | 4.5V, 10V | 107 mOhm @ 2A, 10V | - | 7nC @ 10V | ±20V | ||||
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 3.2A TSM | TO-236-3, SC-59, SOT-23-3 | π-MOSVI | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Obsolete | TSM | N-Channel | 30V | 152pF @ 10V | 1.25W (Ta) | 3.2A (Ta) | 2.5V, 4V | 120 mOhm @ 1.6A, 4V | - | - | ±10V | |||||
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Toshiba Semiconductor and Storage | MOSFET P-CH 30V 2.7A TSM | TO-236-3, SC-59, SOT-23-3 | U-MOSII | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Obsolete | TSM | P-Channel | 30V | 413pF @ 15V | 700mW (Ta) | 2.7A (Ta) | 4V, 10V | 85 mOhm @ 1.35A, 10V | - | - | ±20V | |||||
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 200MA SMD | TO-236-3, SC-59, SOT-23-3 | - | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Obsolete | S-Mini | N-Channel | 60V | 17pF @ 25V | 200mW (Ta) | 200mA (Ta) | 4.5V, 10V | 2.1 Ohm @ 500mA, 10V | 2.5V @ 250µA | - | ±20V | |||||
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Toshiba Semiconductor and Storage | X34 : SMALL LOW ON RESISTANCE NC | TO-236-3, SC-59, SOT-23-3 | π-MOSIV | MOSFET (Metal Oxide) | Surface Mount | 150°C | Active | S-Mini | N-Channel | 30V | 7.8pF @ 3V | 200mW (Ta) | 100mA (Ta) | 2.5V, 4V | 4 Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V |