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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Microsemi Corporation | POWER MOSFET - SIC | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | Bulk | SiCFET (Silicon Carbide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D3Pak | N-Channel | 700V | 220W (Tc) | 65A (Tc) | 20V | 70 mOhm @ 32.5A, 20V | 2.5V @ 1mA | 125nC @ 20V | +25V, -10V |