- Series :
- Part Status :
- Input Capacitance (Ciss) (Max) @ Vds :
- Rds On (Max) @ Id, Vgs :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Microsemi Corporation | MOSFET N-CH 500V 58A T-MAX | TO-247-3 Variant | POWER MOS V® | Tube | MOSFET (Metal Oxide) | Through Hole | - | Obsolete | T-MAX™ [B2] | N-Channel | 500V | 8797pF @ 25V | - | 58A (Tc) | 10V | 80 mOhm @ 29A, 10V | 4V @ 2.5mA | 423nC @ 10V | - | ||||
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Microsemi Corporation | MOSFET N-CH 500V 58A T-MAX | TO-247-3 Variant | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | T-MAX™ [B2] | N-Channel | 500V | 9000pF @ 25V | 730W (Tc) | 58A (Tc) | 15V | 90 mOhm @ 29A, 12V | 4V @ 2.5mA | - | ±30V |