- Package / Case :
- Supplier Device Package :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Microsemi Corporation | MOSFET N-CH 800V 34A TO-264 | TO-264-3, TO-264AA | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-264 [L] | N-Channel | 800V | 4510pF @ 25V | 417W (Tc) | 34A (Tc) | 10V | 145 mOhm @ 22A, 10V | 3.9V @ 2mA | 355nC @ 10V | ±20V | ||||
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Microsemi Corporation | MOSFET N-CH 800V 34A T-MAX | TO-247-3 Variant | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | T-MAX™ [B2] | N-Channel | 800V | 4510pF @ 25V | 417W (Tc) | 34A (Tc) | 10V | 145 mOhm @ 22A, 10V | 3.9V @ 2mA | 355nC @ 10V | ±20V |