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Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
HZU33BTRF-E
Per Unit
$30.5400
RFQ
Microsemi Corporation MOSFET N-CH 1000V 20A SOT-227 SOT-227-4, miniBLOC POWER MOS 8™ Tube MOSFET (Metal Oxide) Chassis Mount -55°C ~ 150°C (TJ) Active ISOTOP® N-Channel 1000V 8500pF @ 25V 460W (Tc) 20A (Tc) 10V 440 mOhm @ 16A, 10V 5V @ 2.5mA 260nC @ 10V ±30V -
HVM15TR
Per Unit
$22.1700
RFQ
Microsemi Corporation MOSFET N-CH 1000V 30A T-MAX TO-247-3 Variant POWER MOS 8™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active T-MAX™ [B2] N-Channel 1000V 8500pF @ 25V 1040W (Tc) 30A (Tc) 10V 440 mOhm @ 16A, 10V 5V @ 2.5mA 260nC @ 10V ±30V -
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