2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Microsemi Corporation | MOSFET N-CH 200V 56A TO-247 | TO-247-3 | POWER MOS V® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 [B] | N-Channel | 200V | 4860pF @ 25V | 300W (Tc) | 56A (Tc) | 10V | 45 mOhm @ 500mA, 10V | 4V @ 1mA | 195nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 200V 56A TO-247 | TO-247-3 | POWER MOS V® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 [B] | N-Channel | 200V | 4860pF @ 25V | 300W (Tc) | 56A (Tc) | 10V | 45 mOhm @ 500mA, 10V | 4V @ 1mA | 195nC @ 10V | ±30V | - |