- Series :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Microsemi Corporation | MOSFET N-CH 1000V 30A TO264 | TO-264-3, TO-264AA | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-264 | N-Channel | 1000V | 8500pF @ 25V | 1040W (Tc) | 30A (Tc) | 10V | 460 mOhm @ 16A, 10V | 5V @ 2.5mA | 260nC @ 10V | ±30V | ||||
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Microsemi Corporation | MOSFET N-CH 500V 84A TO-264 | TO-264-3, TO-264AA | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-264 | N-Channel | 500V | 13500pF @ 25V | 1135W (Tc) | 84A (Tc) | 10V | 65 mOhm @ 42A, 10V | 5V @ 2.5mA | 340nC @ 10V | ±30V | ||||
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Microsemi Corporation | MOSFET N-CH 800V 44A TO-264 | TO-264-3, TO-264AA | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-264 | N-Channel | 800V | 9330pF @ 25V | 1135W (Tc) | 47A (Tc) | 10V | 240 mOhm @ 24A, 10V | 5V @ 2.5mA | 305nC @ 10V | ±30V | ||||
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Microsemi Corporation | MOSFET N-CH 600V 56A TO-264 | TO-264-3, TO-264AA | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-264 | N-Channel | 600V | 11300pF @ 25V | 1040W (Tc) | 60A (Tc) | 10V | 130 mOhm @ 28A, 10V | 5V @ 2.5mA | 280nC @ 10V | ±30V | ||||
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Microsemi Corporation | MOSFET N-CH 1000V 37A TO-264 | TO-264-3, TO-264AA | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-264 | N-Channel | 1000V | 9835pF @ 25V | 1135W (Tc) | 37A (Tc) | 10V | 330 mOhm @ 18A, 10V | 5V @ 2.5mA | 305nC @ 10V | ±30V | ||||
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Microsemi Corporation | MOSFET N-CH 1000V 32A TO264 | TO-264-3, TO-264AA | POWER MOS 8™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-264 | N-Channel | 1000V | 8500pF @ 25V | 1040W (Tc) | 32A (Tc) | 10V | 400 mOhm @ 16A, 10V | 5V @ 2.5mA | 260nC @ 10V | ±30V | ||||
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Microsemi Corporation | MOSFET N-CH 500V 56A TO-264 | TO-264-3, TO-264AA | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-264 | N-Channel | 500V | 8800pF @ 25V | 780W (Tc) | 56A (Tc) | 10V | 100 mOhm @ 28A, 10V | 5V @ 2.5mA | 220nC @ 10V | ±30V |