- Package / Case :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- FET Feature :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Microsemi Corporation | MOSFET N-CH 650V 94A TO-247 | TO-247-3 Variant | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | T-MAX™ [B2] | N-Channel | 650V | 13940pF @ 25V | 833W (Tc) | 94A (Tc) | 10V | 35 mOhm @ 47A, 10V | 3.9V @ 5.8mA | 580nC @ 10V | ±20V | - | ||||
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Microsemi Corporation | MOSFET N-CH 650V 95A T-MAX | TO-247-3 Variant | - | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | T-MAX™ [B2] | N-Channel | 650V | 8140pF @ 25V | 833W (Tc) | 95A (Tc) | 10V | 35 mOhm @ 35.2A, 10V | 3.5V @ 3.5mA | 320nC @ 10V | ±20V | Super Junction | ||||
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Microsemi Corporation | MOSFET N-CH 650V 97A TO-264 | TO-264-3, TO-264AA | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-264 [L] | N-Channel | 650V | 7650pF @ 25V | 862W (Tc) | 97A (Tc) | 10V | 41 mOhm @ 48.5A, 10V | 3.5V @ 2.96mA | 300nC @ 10V | ±20V | - | ||||
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Microsemi Corporation | MOSFET N-CH 650V 47A TO-247 | TO-247-3 | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 [B] | N-Channel | 650V | 7015pF @ 25V | 417W (Tc) | 47A (Tc) | 10V | 70 mOhm @ 30A, 10V | 3.9V @ 2.7mA | 260nC @ 10V | ±20V | - |