- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Microsemi Corporation | MOSFET N-CH 1200V 5A TO220 | TO-220-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-220 [K] | N-Channel | 1200V | 1385pF @ 25V | 225W (Tc) | 5A (Tc) | 10V | 4 Ohm @ 2A, 10V | 5V @ 1mA | 43nC @ 10V | ±30V | ||||
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Microsemi Corporation | MOSFET N-CH 1200V 4A TO-220 | TO-220-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-220 | N-Channel | 1200V | 1385pF @ 25V | 225W (Tc) | 4A (Tc) | 10V | 4.6 Ohm @ 2A, 10V | 5V @ 500µA | 43nC @ 10V | ±30V |