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5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max)
JM38510/32702BCA
RFQ
Microsemi Corporation MOSFET N-CH 500V 20A TO-247 TO-247-3 - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247 [B] N-Channel 500V 2950pF @ 25V 290W (Tc) 20A (Tc) 10V 300 mOhm @ 10A, 10V 5V @ 500µA 75nC @ 10V ±30V
JM38510/11401BGA
RFQ
Microsemi Corporation MOSFET N-CH 600V 15A TO-247 TO-247-3 POWER MOS 8™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247 [B] N-Channel 600V 2882pF @ 25V 290W (Tc) 16A (Tc) 10V 430 mOhm @ 7A, 10V 5V @ 500µA 72nC @ 10V ±30V
HVU355TRF
Per Unit
$5.1293
RFQ
Microsemi Corporation MOSFET N-CH 1000V 7A TO-247 TO-247-3 - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247 [B] N-Channel 1000V 1800pF @ 25V 290W (Tc) 7A (Tc) 10V 2 Ohm @ 4A, 10V 5V @ 500µA 58nC @ 10V ±30V
HS1-82C55ARH
Per Unit
$6.7200
RFQ
Microsemi Corporation MOSFET N-CH 1000V 8A TO-247 TO-247-3 - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247 [B] N-Channel 1000V 1885pF @ 25V 290W (Tc) 8A (Tc) 10V 1.8 Ohm @ 4A, 10V 5V @ 1mA 60nC @ 10V ±30V
APT20F50B
RFQ
Microsemi Corporation MOSFET N-CH 500V 20A TO-247 TO-247-3 - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247 [B] N-Channel 500V 2950pF @ 25V 290W (Tc) 20A (Tc) 10V 300 mOhm @ 10A, 10V 5V @ 500µA 75nC @ 10V ±30V
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