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Packaging :
Supplier Device Package :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
JANTX2N4856
RFQ
Microsemi Corporation MOSFET N-CH 1000V 28A T-MAX TO-247-3 Variant POWER MOS 7® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active T-MAX™ [B2] N-Channel 1000V 5185pF @ 25V 690W (Tc) 28A (Tc) 10V 350 mOhm @ 14A, 10V 5V @ 2.5mA 186nC @ 10V ±30V -
IA2416BTT-1L
Per Unit
$35.4732
RFQ
Microsemi Corporation MOSFET N-CH 1200V 22A TO-264 TO-264-3, TO-264AA POWER MOS 7® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-264 [L] N-Channel 1200V 5155pF @ 25V 690W (Tc) 22A (Tc) 10V 570 mOhm @ 11A, 10V 5V @ 2.5mA 185nC @ 10V ±30V -
IA2410-IC-CA5
Per Unit
$33.8373
RFQ
Microsemi Corporation MOSFET N-CH 1200V 22A T-MAX TO-247-3 POWER MOS 7® Bulk MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active T-MAX™ [B2] N-Channel 1200V 6200pF @ 25V 690W (Tc) 22A (Tc) 10V 570 mOhm @ 11A, 10V 5V @ 2.5mA 290nC @ 10V ±30V -
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