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Packaging :
Supplier Device Package :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
Vgs(th) (Max) @ Id :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
LX1692IPW
RFQ
Microsemi Corporation MOSFET P-CHANNEL 100V 25A TO3 TO-204AA, TO-3 - Bulk MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-3 P-Channel 100V 3000pF @ 25V 150W (Tc) 25A (Tc) 10V 200 mOhm @ 15.8A, 10V 4V @ 250µA - ±20V -
LX1692IDW-TR SOP20
RFQ
Microsemi Corporation MOSFET P-CHANNEL 100V 25A TO3 TO-204AA, TO-3 - Bulk MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-3 P-Channel 100V 3000pF @ 25V 150W (Tc) 25A (Tc) 10V 200 mOhm @ 15.8A, 10V 4V @ 250µA - ±20V -
LX1692FIDW-TR
RFQ
Microsemi Corporation MOSFET P-CHANNEL 100V 25A TO3 TO-204AA, TO-3 - Bulk MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-3 P-Channel 100V 3000pF @ 25V 150W (Tc) 25A (Tc) 10V 200 mOhm @ 15.8A, 10V 4V @ 250µA - ±20V -
HWXP215A-1
Per Unit
$10.4615
RFQ
Microsemi Corporation MOSFET N-CH 800V 25A TO-247 TO-247-3 POWER MOS 8™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247 [B] N-Channel 800V 4595pF @ 25V 625W (Tc) 25A (Tc) 10V 390 mOhm @ 12A, 10V 5V @ 1mA 150nC @ 10V ±30V -
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