Chat with us, powered by LiveChat
Build a global manufacturer and supplier trusted trading platform.
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
LCX3820P2
RFQ
Microsemi Corporation MOSFET N-CH 800V 31A TO-264 TO-264-3, TO-264AA POWER MOS 7® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-264 [L] N-Channel 800V 4670pF @ 25V 565W (Tc) 31A (Tc) 10V 240 mOhm @ 15.5A, 10V 5V @ 2.5mA 160nC @ 10V ±30V -
KMC9S08RD60CPE
RFQ
Microsemi Corporation MOSFET N-CH 550V 31A TO-247 TO-247-3 POWER MOS 7® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-247-3 N-Channel 550V 3286pF @ 25V 403W (Tc) 31A (Tc) 10V 180 mOhm @ 15.5A, 10V 5V @ 1mA 67nC @ 10V ±30V -
JX2N3867
RFQ
Microsemi Corporation MOSFET N-CH 600V 31A TO-247 TO-247-3 CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-247-3 N-Channel 600V 3055pF @ 25V 255W (Tc) 31A (Tc) 10V 100 mOhm @ 18A, 10V 3.9V @ 1.2mA 85nC @ 10V ±30V -
HVC200ATRU
Per Unit
$28.1800
RFQ
Microsemi Corporation MOSFET N-CH 800V 31A T-MAX TO-247-3 Variant POWER MOS 7® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active T-MAX™ [B2] N-Channel 800V 4670pF @ 25V 565W (Tc) 31A (Tc) 10V 240 mOhm @ 15.5A, 10V 5V @ 2.5mA 160nC @ 10V ±30V -
APT5518BFLLG
RFQ
Microsemi Corporation MOSFET N-CH 550V 31A TO-247 TO-247-3 POWER MOS 7® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-247-3 N-Channel 550V 3286pF @ 25V 403W (Tc) 31A (Tc) 10V 180 mOhm @ 15.5A, 10V 5V @ 1mA 67nC @ 10V ±30V -
Page 1 / 1