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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs(th) (Max) @ Id :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max)
ICL7612DCTV
Per Unit
$49.9244
RFQ
Microsemi Corporation MOSFET N-CH 600V 49A TO-264 TO-264-3, TO-264AA - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-264 [L] N-Channel 600V 9000pF @ 25V 730W (Tc) 49A (Tc) 12V 125 mOhm @ 24.5A, 12V 4V @ 2.5mA - ±30V
ICL76105DK8
Per Unit
$48.3447
RFQ
Microsemi Corporation MOSFET N-CH 600V 49A T-MAX TO-247-3 Variant - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active T-MAX™ [B2] N-Channel 600V 9000pF @ 25V 730W (Tc) 49A (Tc) 12V 125 mOhm @ 24.5A, 12V 4V @ 2.5mA - ±30V
HZM24NB2TL
Per Unit
$19.4173
RFQ
Microsemi Corporation MOSFET N-CH 800V 48A T-MAX TO-247-3 Variant POWER MOS 8™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active T-MAX™ [B2] N-Channel 800V 9330pF @ 25V 1135W (Tc) 49A (Tc) 10V 190 mOhm @ 24A, 10V 5V @ 2.5mA 305nC @ 10V ±30V
HSM123JTL-E
Per Unit
$22.4600
RFQ
Microsemi Corporation MOSFET N-CH 800V 48A TO-264 TO-264-3, TO-264AA - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-264 [L] N-Channel 800V 9330pF @ 25V 1135W (Tc) 49A (Tc) 10V 200 mOhm @ 24A, 10V 5V @ 2.5mA 305nC @ 10V ±30V
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