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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
KMC9S08RD60CPE
RFQ
Microsemi Corporation MOSFET N-CH 550V 31A TO-247 POWER MOS 7® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-247-3 N-Channel 550V 3286pF @ 25V 403W (Tc) 31A (Tc) 10V 180 mOhm @ 15.5A, 10V 5V @ 1mA 67nC @ 10V ±30V -
APT5518BFLLG
RFQ
Microsemi Corporation MOSFET N-CH 550V 31A TO-247 POWER MOS 7® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-247-3 N-Channel 550V 3286pF @ 25V 403W (Tc) 31A (Tc) 10V 180 mOhm @ 15.5A, 10V 5V @ 1mA 67nC @ 10V ±30V -
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