- Input Capacitance (Ciss) (Max) @ Vds :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Microsemi Corporation | MOSFET N-CH 600V 20.7A TO-247 | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-247-3 | N-Channel | 600V | 2440pF @ 25V | 208W (Tc) | 20.7A (Tc) | 10V | 190 mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114nC @ 10V | ±20V | - | ||||
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Microsemi Corporation | MOSFET N-CH 800V 17A TO-247 | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-247-3 | N-Channel | 800V | 2250pF @ 25V | 208W (Tc) | 17A (Tc) | 10V | 290 mOhm @ 11A, 10V | 3.9V @ 1mA | 90nC @ 10V | ±20V | - |