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Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
LE57D111DJC
RFQ
Microsemi Corporation MOSFET N-CH 800V 8A TO-220 TO-220-3 POWER MOS 8™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-220 [K] N-Channel 800V 1335pF @ 25V 225W (Tc) 8A (Tc) 10V 1.35 Ohm @ 4A, 10V 5V @ 500µA 43nC @ 10V ±30V -
LC5535LQ-TR
RFQ
Microsemi Corporation MOSFET N-CH 800V 7A TO-220 TO-220-3 POWER MOS 8™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-220 [K] N-Channel 800V 1335pF @ 25V 225W (Tc) 7A (Tc) 10V 1.5 Ohm @ 4A, 10V 5V @ 500µA 43nC @ 10V ±30V -
JL2007C
RFQ
Microsemi Corporation MOSFET N-CH 800V 11A TO-220 TO-220-3 CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-220 [K] N-Channel 800V 1585pF @ 25V 156W (Tc) 11A (Tc) 10V 450 mOhm @ 7.1A, 10V 3.9V @ 680µA 60nC @ 10V ±20V -
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