- Series :
- Part Status :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Microsemi Corporation | MOSFET N-CH 1000V 18A SOT-227 | SOT-227-4, miniBLOC | - | Tube | MOSFET (Metal Oxide) | Chassis Mount | -55°C ~ 150°C (TJ) | Obsolete | ISOTOP® | N-Channel | 1000V | 7200pF @ 25V | 520W (Tc) | 18A (Tc) | 10V | 600 mOhm @ 500mA, 10V | 4V @ 2.5mA | - | ±30V | ||||
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Microsemi Corporation | MOSFET N-CH 1000V 25A SOT-227 | SOT-227-4, miniBLOC | POWER MOS 7® | Tube | MOSFET (Metal Oxide) | Chassis Mount | -55°C ~ 150°C (TJ) | Active | ISOTOP® | N-Channel | 1000V | 5185pF @ 25V | 520W (Tc) | 25A (Tc) | 10V | 350 mOhm @ 14A, 10V | 5V @ 2.5mA | 186nC @ 10V | ±30V | ||||
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Microsemi Corporation | MOSFET N-CH 1000V 23A SOT-227 | SOT-227-4, miniBLOC | POWER MOS 8™ | Tube | MOSFET (Metal Oxide) | Chassis Mount | -55°C ~ 150°C (TJ) | Active | ISOTOP® | N-Channel | 1000V | 9835pF @ 25V | 545W (Tc) | 23A (Tc) | 10V | 380 mOhm @ 18A, 10V | - | 305nC @ 10V | ±30V | ||||
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Microsemi Corporation | MOSFET N-CH 1000V 20A SOT-227 | SOT-227-4, miniBLOC | POWER MOS 8™ | Tube | MOSFET (Metal Oxide) | Chassis Mount | -55°C ~ 150°C (TJ) | Active | ISOTOP® | N-Channel | 1000V | 8500pF @ 25V | 460W (Tc) | 20A (Tc) | 10V | 440 mOhm @ 16A, 10V | 5V @ 2.5mA | 260nC @ 10V | ±30V | ||||
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Microsemi Corporation | MOSFET N-CH 1000V 25A SOT-227 | SOT-227-4, miniBLOC | POWER MOS 8™ | Tube | MOSFET (Metal Oxide) | Chassis Mount | -55°C ~ 150°C (TJ) | Active | ISOTOP® | N-Channel | 1000V | 9835pF @ 25V | 545W (Tc) | 25A (Tc) | 10V | 330 mOhm @ 18A, 10V | 5V @ 2.5mA | 305nC @ 10V | ±30V | ||||
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Microsemi Corporation | MOSFET N-CH 1000V 21A SOT-227 | SOT-227-4, miniBLOC | POWER MOS 8™ | Tube | MOSFET (Metal Oxide) | Chassis Mount | -55°C ~ 150°C (TJ) | Active | ISOTOP® | N-Channel | 1000V | 8500pF @ 25V | 462W (Tc) | 21A (Tc) | 10V | 380 mOhm @ 16A, 10V | 5V @ 2.5mA | 260nC @ 10V | ±30V | ||||
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Microsemi Corporation | MOSFET N-CH 1000V 21A SOT-227 | SOT-227-4, miniBLOC | POWER MOS 7® | Tube | MOSFET (Metal Oxide) | Chassis Mount | -55°C ~ 150°C (TJ) | Active | ISOTOP® | N-Channel | 1000V | 4350pF @ 25V | 460W (Tc) | 21A (Tc) | 10V | 450 mOhm @ 11.5A, 10V | 5V @ 2.5mA | 154nC @ 10V | ±30V | ||||
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Microsemi Corporation | MOSFET N-CH 1000V 37A SOT-227 | SOT-227-4, miniBLOC | POWER MOS 7® | Tube | MOSFET (Metal Oxide) | Chassis Mount | -55°C ~ 150°C (TJ) | Active | ISOTOP® | N-Channel | 1000V | 9750pF @ 25V | 694W (Tc) | 37A (Tc) | 10V | 210 mOhm @ 18.5A, 10V | 5V @ 5mA | 395nC @ 10V | ±30V | ||||
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Microsemi Corporation | MOSFET N-CH 1000V 37A SOT-227 | SOT-227-4, miniBLOC | POWER MOS 7® | Tube | MOSFET (Metal Oxide) | Chassis Mount | -55°C ~ 150°C (TJ) | Active | ISOTOP® | N-Channel | 1000V | 9750pF @ 25V | 694W (Tc) | 37A (Tc) | 10V | 210 mOhm @ 18.5A, 10V | 5V @ 5mA | 395nC @ 10V | ±30V | ||||
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Microsemi Corporation | MOSFET N-CH 1000V 41A SOT-227 | SOT-227-4, miniBLOC | - | Tube | MOSFET (Metal Oxide) | Chassis Mount | -55°C ~ 150°C (TJ) | Active | ISOTOP® | N-Channel | 1000V | 18500pF @ 25V | 960W (Tc) | 42A (Tc) | 10V | 210 mOhm @ 33A, 10V | 5V @ 5mA | 570nC @ 10V | ±30V |