- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET N-CHAN 100V POWERPAK 1212 | TrenchFET® Gen IV | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerPAK® SO-8 | N-Channel | 20V | 3415pF @ 10V | 5W (Ta), 62.5W (Tc) | 50.2A (Ta), 177A (Tc) | 2.5V, 10V | 1.35 mOhm @ 10A, 10V | 1.5V @ 250µA | 53nC @ 10V | +12V, -8V | - | |||||
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Vishay Siliconix | MOSFET P-CH 40V PPAK 1212-8W | TrenchFET® Gen IV | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerPAK® 1212-8 | N-Channel | 20V | 3415pF @ 10V | 3.7W (Ta), 52W (Tc) | 43.7A (Ta), 162A (Tc) | 2.5V, 10V | 1.1 mOhm @ 10A, 10V | 1.5V @ 250µA | 53nC @ 10V | +12V, -8V | - | |||||
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Vishay Siliconix | MOSFET N-CH 20V PPAK SO-8 | TrenchFET® Gen IV | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerPAK® SO-8 | N-Channel | 20V | 3415pF @ 10V | 5W (Ta), 62.5W (Tc) | 50.2A (Ta), 177A (Tc) | 2.5V, 10V | 1.35 mOhm @ 10A, 10V | 1.5V @ 250µA | 53nC @ 10V | +12V, -8V | - | |||||
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Vishay Siliconix | MOSFET N-CH 20V PPAK 1212-8 | TrenchFET® Gen IV | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerPAK® 1212-8 | N-Channel | 20V | 3415pF @ 10V | 3.7W (Ta), 52W (Tc) | 43.7A (Ta), 162A (Tc) | 2.5V, 10V | 1.1 mOhm @ 10A, 10V | 1.5V @ 250µA | 53nC @ 10V | +12V, -8V | - |