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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
SGM2310B
RFQ
Vishay Siliconix MOSFET N-CH 30V 44.5A POLARPAK TrenchFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 10-PolarPAK® (L) N-Channel 30V 6100pF @ 15V 5.2W (Ta), 125W (Tc) 60A (Tc) 4.5V, 10V 1.6 mOhm @ 25A, 10V 2.5V @ 250µA 138nC @ 10V ±20V -
RJK6025DPD
RFQ
Vishay Siliconix MOSFET N-CH 200V 18.3A POLARPAK TrenchFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 10-PolarPAK® (L) N-Channel 30V 6100pF @ 15V 5.2W (Ta), 125W (Tc) 60A (Tc) 4.5V, 10V 1.6 mOhm @ 25A, 10V 2.5V @ 250µA 138nC @ 10V ±20V -
SIE848DF-T1-E3
RFQ
Vishay Siliconix MOSFET N-CH 30V 60A POLARPAK TrenchFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 10-PolarPAK® (L) N-Channel 30V 6100pF @ 15V 5.2W (Ta), 125W (Tc) 60A (Tc) 4.5V, 10V 1.6 mOhm @ 25A, 10V 2.5V @ 250µA 138nC @ 10V ±20V -
SIE848DF-T1-GE3
RFQ
Vishay Siliconix MOSFET N-CH 30V 60A POLARPAK TrenchFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 10-PolarPAK® (L) N-Channel 30V 6100pF @ 15V 5.2W (Ta), 125W (Tc) 60A (Tc) 4.5V, 10V 1.6 mOhm @ 25A, 10V 2.5V @ 250µA 138nC @ 10V ±20V -
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