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IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Vishay Siliconix | MOSFET N-CH 200V 31A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | - | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | I2PAK | N-Channel | 200V | 2370pF @ 25V | 3.1W (Ta), 200W (Tc) | 31A (Tc) | 10V | 82 mOhm @ 18A, 10V | 5.5V @ 250µA | 110nC @ 10V | ±30V | ||||||
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Vishay Siliconix | MOSFET N-CH 600V 9.2A D2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | - | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | I2PAK | N-Channel | 200V | 2370pF @ 25V | 3.1W (Ta), 200W (Tc) | 31A (Tc) | 10V | 82 mOhm @ 18A, 10V | 5.5V @ 250µA | 110nC @ 10V | ±30V |