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Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
ME15N06T
Per Unit
$1.0395
RFQ
Vishay Siliconix MOSFET N-CH 30V 30A 8-SOIC 8-SOIC (0.154", 3.90mm Width) TrenchFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-SO N-Channel 30V 5370pF @ 15V 3W (Ta), 6W (Tc) 30A (Tc) 4.5V, 10V 3.3 mOhm @ 15A, 10V 2.5V @ 250µA 125nC @ 10V ±20V -
ME1472
Per Unit
$1.0395
RFQ
Vishay Siliconix MOSFET N-CH 20V 13.5A 1212-8 8-SOIC (0.154", 3.90mm Width) TrenchFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-SO N-Channel 30V 5370pF @ 15V 3W (Ta), 6W (Tc) 30A (Tc) 4.5V, 10V 3.3 mOhm @ 15A, 10V 2.5V @ 250µA 125nC @ 10V ±20V -
EUP7917-15VIR1
Per Unit
$0.6554
RFQ
Vishay Siliconix MOSFET N-CH 150V 2.7A 8-SOIC 8-SOIC (0.154", 3.90mm Width) TrenchFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-SO N-Channel 40V 4230pF @ 20V 3.5W (Ta), 7.8W (Tc) 36A (Tc) 4.5V, 10V 3.3 mOhm @ 15A, 10V 2.5V @ 250µA 105nC @ 10V ±20V -
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