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4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
RU2560L
RFQ
Vishay Siliconix MOSFET N-CH 100V 3.8A 8-SOIC 8-SOIC (0.154", 3.90mm Width) TrenchFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO N-Channel 100V 446pF @ 50V 2.5W (Ta), 5W (Tc) 4.6A (Tc) 10V 105 mOhm @ 5A, 10V 4.5V @ 250µA 13nC @ 10V ±20V -
RCRD014SD
RFQ
Vishay Siliconix MOSFET N-CH 20V 12A 8-SOIC 8-SOIC (0.154", 3.90mm Width) TrenchFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO N-Channel 100V 446pF @ 50V 2.5W (Ta), 5W (Tc) 4.6A (Tc) 10V 105 mOhm @ 5A, 10V 4.5V @ 250µA 13nC @ 10V ±20V -
SI4104DY-T1-E3
RFQ
Vishay Siliconix MOSFET N-CH 100V 4.6A 8-SOIC 8-SOIC (0.154", 3.90mm Width) TrenchFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO N-Channel 100V 446pF @ 50V 2.5W (Ta), 5W (Tc) 4.6A (Tc) 10V 105 mOhm @ 5A, 10V 4.5V @ 250µA 13nC @ 10V ±20V -
SI4104DY-T1-GE3
RFQ
Vishay Siliconix MOSFET N-CH 100V 4.6A 8-SOIC 8-SOIC (0.154", 3.90mm Width) TrenchFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO N-Channel 100V 446pF @ 50V 2.5W (Ta), 5W (Tc) 4.6A (Tc) 10V 105 mOhm @ 5A, 10V 4.5V @ 250µA 13nC @ 10V ±20V -
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