- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET N-CH 190V 0.95A SC70-6 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | TO-252, (D-Pak) | N-Channel | 250V | 1950pF @ 25V | 3W (Ta), 136W (Tc) | 17A (Tc) | 10V | 165 mOhm @ 14A, 10V | 4V @ 250µA | 42nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET N-CH 40V 110A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | TO-263 (D2Pak) | N-Channel | 250V | 1950pF @ 25V | 3.75W (Ta), 150W (Tc) | 18A (Tc) | 10V | 165 mOhm @ 14A, 10V | 4V @ 250µA | 45nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET N-CH 250V 17A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | TO-252, (D-Pak) | N-Channel | 250V | 1950pF @ 25V | 3W (Ta), 136W (Tc) | 17A (Tc) | 10V | 165 mOhm @ 14A, 10V | 4V @ 250µA | 42nC @ 10V | ±20V | - |