- Part Status :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET P-CH 30V 3.7A 6-TSOP | SOT-23-6 Thin, TSOT-23-6 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 6-TSOP | N-Channel | 20V | - | 1.1W (Ta) | 5.1A (Ta) | 1.8V, 4.5V | 27 mOhm @ 5.1A, 4.5V | 450mV @ 1mA (Min) | 20nC @ 4.5V | ±8V | - | |||||
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Vishay Siliconix | MOSFET N-CH 100V 120A TO220AB | SOT-23-6 Thin, TSOT-23-6 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 6-TSOP | N-Channel | 20V | - | 1.1W (Ta) | 5.1A (Ta) | 1.8V, 4.5V | 27 mOhm @ 5.1A, 4.5V | 450mV @ 1mA (Min) | 20nC @ 4.5V | ±8V | - | |||||
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Vishay Siliconix | MOSFET N-CH 30V 6.5A PPAK 1212-8 | SOT-23-6 Thin, TSOT-23-6 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 6-TSOP | N-Channel | 20V | 860pF @ 10V | 2W (Ta), 3.5W (Tc) | 8A (Tc) | 1.8V, 4.5V | 27 mOhm @ 5.1A, 4.5V | 1V @ 250µA | 24nC @ 8V | ±8V | - | |||||
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Vishay Siliconix | MOSFET P-CH 30V 19.7A 8-SOIC | SOT-23-6 Thin, TSOT-23-6 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 6-TSOP | N-Channel | 20V | 860pF @ 10V | 2W (Ta), 3.5W (Tc) | 8A (Tc) | 1.8V, 4.5V | 27 mOhm @ 5.1A, 4.5V | 1V @ 250µA | 24nC @ 8V | ±8V | - |