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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET N-CH 30V 60A POWERPAKSO-8 | TO-220-3 Full Pack | E | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220 Full Pack | N-Channel | 800V | 315pF @ 100V | 29W (Tc) | 2.8A (Tc) | 10V | 2.75 Ohm @ 1A, 10V | 4V @ 250µA | 19.6nC @ 10V | ±30V | - | |||||
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Vishay Siliconix | MOSFET N-CH 200V 1.7A 1212-8 | TO-252-3, DPak (2 Leads + Tab), SC-63 | E | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D-PAK (TO-252AA) | N-Channel | 800V | 315pF @ 100V | 62.5W (Tc) | 2.8A (Tc) | 10V | 2.75 Ohm @ 1A, 10V | 4V @ 250µA | 19.6nC @ 10V | ±30V | - | |||||
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Vishay Siliconix | MOSFET N-CH 500V 3.3A I-PAK | TO-251-3 Long Leads, IPak, TO-251AB | E | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | IPAK (TO-251) | N-Channel | 800V | 315pF @ 100V | 62.5W (Tc) | 2.8A (Tc) | 10V | 2.75 Ohm @ 1A, 10V | 4V @ 250µA | 19.6nC @ 10V | ±30V | - |