- Part Status :
- Supplier Device Package :
- FET Type :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET N-CH 30V 90A TO252 | TO-220-3 | TrenchFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-220AB | P-Channel | 60V | 3500pF @ 25V | 3.1W (Ta), 104.2W (Tc) | 9.2A (Ta), 53A (Tc) | 4.5V, 10V | 19.5 mOhm @ 30A, 10V | 3V @ 250µA | 115nC @ 10V | ±20V | - | ||||
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Vishay Siliconix | MOSFET N-CH 600V 11A TO-247AC | TO-247-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-247-3 | N-Channel | 600V | 3500pF @ 25V | 280W (Tc) | 16A (Tc) | 10V | 400 mOhm @ 9.6A, 10V | 4V @ 250µA | 120nC @ 10V | ±30V | - | ||||
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Vishay Siliconix | MOSFET N-CH 600V 6.2A TO-220AB | TO-247-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247-3 | N-Channel | 600V | 3500pF @ 25V | 280W (Tc) | 16A (Tc) | 10V | 400 mOhm @ 9.6A, 10V | 4V @ 250µA | 120nC @ 10V | ±30V | - | ||||
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Vishay Siliconix | MOSFET P-CH 40V 110A D2PAK | TO-220-3 | TrenchFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220AB | P-Channel | 60V | 3500pF @ 25V | 3.1W (Ta), 104.2W (Tc) | 9.2A (Ta), 53A (Tc) | 4.5V, 10V | 19.5 mOhm @ 30A, 10V | 3V @ 250µA | 115nC @ 10V | ±20V | - |