- Package / Case :
- Supplier Device Package :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET N-CHAN 800V TO-220AB | TO-220-3 Full Pack | E | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220 Full Pack | N-Channel | 800V | 622pF @ 100V | 69W (Tc) | 4.3A (Tc) | 10V | 1.27 Ohm @ 2A, 10V | 4V @ 250µA | 32nC @ 10V | ±30V | - | ||||
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Vishay Siliconix | MOSFET N-CHANNEL 650V 7A TO220 | TO-220-3 | E | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220AB | N-Channel | 800V | 622pF @ 100V | 69W (Tc) | 4.3A (Tc) | 10V | 1.27 Ohm @ 2A, 10V | 4V @ 250µA | 32nC @ 10V | ±30V | - | ||||
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Vishay Siliconix | MOSFET N-CH 500V 5A I-PAK | TO-251-3 Long Leads, IPak, TO-251AB | E | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | IPAK (TO-251) | N-Channel | 800V | 622pF @ 100V | 69W (Tc) | 4.3A (Tc) | 10V | 1.27 Ohm @ 2A, 10V | 4V @ 250µA | 32nC @ 10V | ±30V | - |