- Package / Case :
- Series :
- Part Status :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET N-CH 600V 2.2A TO-262 | TO-220-5 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-220-5 | N-Channel | 250V | 770pF @ 25V | 74W (Tc) | 8.1A (Tc) | 10V | 450 mOhm @ 4.9A, 10V | 4V @ 250µA | 41nC @ 10V | ±20V | Current Sensing | ||||
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Vishay Siliconix | MOSFET N-CH 200V 9A D2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | I2PAK | N-Channel | 250V | 770pF @ 25V | - | 8.1A (Tc) | 10V | 450 mOhm @ 5.1A, 10V | 4V @ 250µA | 41nC @ 10V | ±20V | - | ||||
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Vishay Siliconix | MOSFET N-CH 100V 42.8A TO220 FPK | TO-220-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220AB | N-Channel | 250V | 770pF @ 25V | 74W (Tc) | 8.1A (Tc) | 10V | 450 mOhm @ 5.1A, 10V | 4V @ 250µA | 41nC @ 10V | ±20V | - | ||||
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Vishay Siliconix | MOSFET N-CH 250V 8.1A TO-220-5 | TO-220-5 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-220-5 | N-Channel | 250V | 770pF @ 25V | 74W (Tc) | 8.1A (Tc) | 10V | 450 mOhm @ 4.9A, 10V | 4V @ 250µA | 41nC @ 10V | ±20V | Current Sensing |