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Package / Case :
Supplier Device Package :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max)
ME2524
Per Unit
$1.2705
RFQ
Vishay Siliconix MOSFET N-CH 150V 25A TO220AB TO-220-3 Automotive, AEC-Q101, TrenchFET® - MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB P-Channel 30V 5380pF @ 25V 150W (Tc) 50A (Tc) 4.5V, 10V 7 mOhm @ 30A, 10V 2.5V @ 250µA 155nC @ 10V ±20V
FHT9014G-H
Per Unit
$6.7200
RFQ
Vishay Siliconix MOSFET N-CH 600V 16A TO-247AC TO-220-3 - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220AB N-Channel 600V 3454pF @ 100V 278W (Tc) 33A (Tc) 10V 98 mOhm @ 16.5A, 10V 4V @ 250µA 155nC @ 10V ±30V
AO3435A
Per Unit
$7.3900
RFQ
Vishay Siliconix MOSFET N-CH 600V 33A TO-247AC TO-247-3 - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247AC N-Channel 600V 3454pF @ 100V 278W (Tc) 33A (Tc) 10V 98 mOhm @ 16.5A, 10V 4V @ 250µA 155nC @ 10V ±30V
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