- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Vishay Siliconix | MOSFET N-CH 500V 8A D2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | I2PAK | P-Channel | 100V | 200pF @ 25V | - | 4A (Tc) | 10V | 1.2 Ohm @ 2.4A, 10V | 4V @ 250µA | 8.7nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET P-CH 60V 8.8A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-251AA | P-Channel | 100V | 200pF @ 25V | 2.5W (Ta), 25W (Tc) | 3.1A (Tc) | 10V | 1.2 Ohm @ 1.9A, 10V | 4V @ 250µA | 8.7nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET N-CH 200V 600MA 4-DIP | 4-DIP (0.300", 7.62mm) | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | 4-DIP, Hexdip, HVMDIP | P-Channel | 100V | 200pF @ 25V | 1.3W (Ta) | 700mA (Ta) | 10V | 1.2 Ohm @ 420mA, 10V | 4V @ 250µA | 8.7nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET N-CH 100V 5.6A TO-220AB | TO-220-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220AB | P-Channel | 100V | 200pF @ 25V | 43W (Tc) | 4A (Tc) | 10V | 1.2 Ohm @ 2.4A, 10V | 4V @ 250µA | 8.7nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET N-CH 100V 7.2A TO220FP | TO-251-3 Short Leads, IPak, TO-251AA | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-251AA | P-Channel | 100V | 200pF @ 25V | 2.5W (Ta), 25W (Tc) | 3.1A (Tc) | 10V | 1.2 Ohm @ 1.9A, 10V | 4V @ 250µA | 8.7nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET N-CH 100V 5.6A TO-220AB | 4-DIP (0.300", 7.62mm) | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | 4-DIP, Hexdip, HVMDIP | P-Channel | 100V | 200pF @ 25V | 1.3W (Ta) | 700mA (Ta) | 10V | 1.2 Ohm @ 420mA, 10V | 4V @ 250µA | 8.7nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET N-CH 20V 60A PPAK SO-8 | TO-220-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | P-Channel | 100V | 200pF @ 25V | 43W (Tc) | 4A (Tc) | 10V | 1.2 Ohm @ 2.4A, 10V | 4V @ 250µA | 8.7nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET P-CH 100V 3.1A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-251AA | P-Channel | 100V | 200pF @ 25V | 2.5W (Ta), 25W (Tc) | 3.1A (Tc) | 10V | 1.2 Ohm @ 1.9A, 10V | 4V @ 250µA | 8.7nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET P-CH 100V 0.7A 4-DIP | 4-DIP (0.300", 7.62mm) | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | 4-DIP, Hexdip, HVMDIP | P-Channel | 100V | 200pF @ 25V | 1.3W (Ta) | 700mA (Ta) | 10V | 1.2 Ohm @ 420mA, 10V | 4V @ 250µA | 8.7nC @ 10V | ±20V |