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5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max)
NCE4060K
RFQ
Vishay Siliconix MOSFET N-CH 200V 3.3A D2PAK TO-262-3 Long Leads, I²Pak, TO-262AA - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-262 N-Channel 250V 140pF @ 25V - 2.7A (Tc) 10V 2 Ohm @ 1.6A, 10V 4V @ 250µA 8.2nC @ 10V ±20V
NCE4028EK
RFQ
Vishay Siliconix MOSFET N-CH 100V 28A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-262 N-Channel 200V 140pF @ 25V 3W (Ta), 36W (Tc) 3.3A (Tc) 10V 1.5 Ohm @ 2A, 10V 4V @ 250µA 8.2nC @ 10V ±20V
NCE4015S
RFQ
Vishay Siliconix MOSFET N-CH 100V 14A D2PAK TO-262-3 Long Leads, I²Pak, TO-262AA - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-262 N-Channel 100V 1700pF @ 25V - 28A (Tc) 10V 77 mOhm @ 17A, 10V 4V @ 250µA 72nC @ 10V ±20V
NCE4009S
RFQ
Vishay Siliconix MOSFET N-CH 100V 9.2A D2PAK TO-262-3 Long Leads, I²Pak, TO-262AA - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-262 N-Channel 100V 670pF @ 25V - 14A (Tc) 10V 160 mOhm @ 8.4A, 10V 4V @ 250µA 26nC @ 10V ±20V
IRF530L
RFQ
Vishay Siliconix MOSFET N-CH 100V 14A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-262 N-Channel 100V 670pF @ 25V - 14A (Tc) 10V 160 mOhm @ 8.4A, 10V 4V @ 250µA 26nC @ 10V ±20V
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