- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET N-CH 500V 3A TO251 IPAK | TO-251-3 Long Leads, IPak, TO-251AB | - | - | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | IPAK (TO-251) | N-Channel | 500V | 177pF @ 100V | 69W (Tc) | 3A (Tc) | 10V | 3.2 Ohm @ 1.5A, 10V | 4.5V @ 250µA | 12nC @ 10V | ±30V | - | ||||
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Vishay Siliconix | MOSFET N-CH 500V 8.7A TO220 FLPK | TO-251-3 Long Leads, IPak, TO-251AB | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | IPAK (TO-251) | N-Channel | 650V | 820pF @ 100V | 78W (Tc) | 7A (Tc) | 10V | 600 mOhm @ 3A, 10V | 4V @ 250µA | 48nC @ 10V | ±30V | - | ||||
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Vishay Siliconix | MOSFET N-CH 100V 131A TO263 | TO-251-3 Long Leads, IPak, TO-251AB | E | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | IPAK (TO-251) | N-Channel | 800V | 827pF @ 100V | 78W (Tc) | 5.4A (Tc) | 10V | 940 mOhm @ 3A, 10V | 4V @ 250µA | 44nC @ 10V | ±30V | - | ||||
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Vishay Siliconix | MOSFET N-CH 500V 5A I-PAK | TO-251-3 Long Leads, IPak, TO-251AB | E | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | IPAK (TO-251) | N-Channel | 800V | 622pF @ 100V | 69W (Tc) | 4.3A (Tc) | 10V | 1.27 Ohm @ 2A, 10V | 4V @ 250µA | 32nC @ 10V | ±30V | - | ||||
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Vishay Siliconix | MOSFET N-CH 500V 3.3A I-PAK | TO-251-3 Long Leads, IPak, TO-251AB | E | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | IPAK (TO-251) | N-Channel | 800V | 315pF @ 100V | 62.5W (Tc) | 2.8A (Tc) | 10V | 2.75 Ohm @ 1A, 10V | 4V @ 250µA | 19.6nC @ 10V | ±30V | - |