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Packaging :
Supplier Device Package :
Input Capacitance (Ciss) (Max) @ Vds :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
PCF1252-7T/F4+118
RFQ
ON Semiconductor MOSFET N-CH 600V 114A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete DPAK N-Channel 600V 790pF @ 50V 114W (Tc) 11A (Tc) 10V 360 mOhm @ 5.5A, 10V 4V @ 250µA 26nC @ 10V ±25V -
PCF1175CT/F2
RFQ
ON Semiconductor MOSFET N-CH 600V 114A IPAK TO-251-3 Short Leads, IPak, TO-251AA - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete I-PAK N-Channel 600V 790pF @ 50V 114W (Tc) 11A (Tc) 10V 360 mOhm @ 5.5A, 10V 4V @ 250µA 26nC @ 10V ±25V -
PCF1175CT
RFQ
ON Semiconductor MOSFET N-CH 600V 114A IPAK TO-251-3 Short Leads, IPak, TO-251AA - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete I-PAK N-Channel 600V 790pF @ 50V 114W (Tc) 11A (Tc) 10V 360 mOhm @ 5.5A, 10V 4V @ 250µA 26nC @ 10V ±25V -
MTB6D0N03ATH8
Per Unit
$0.4928
RFQ
ON Semiconductor MOSFET N CH 600V 3.4A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 UniFET-II™ MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active DPAK N-Channel 600V 510pF @ 25V 114W (Tc) 3.4A (Tc) 10V 2.5 Ohm @ 1.7A, 10V 5V @ 250µA 10.8nC @ 10V ±25V -
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