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Packaging :
Supplier Device Package :
Drain to Source Voltage (Vdss) :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
P522304-A
RFQ
ON Semiconductor MOSFET N-CH 350V 12A TO-220F TO-220-3 Full Pack UniFET™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-220F N-Channel 350V 1110pF @ 25V 31.3W (Tc) 12A (Tc) 10V 380 mOhm @ 6A, 10V 5V @ 250µA 25nC @ 10V ±30V -
ME6206A33MG
Per Unit
$0.6985
RFQ
ON Semiconductor MOSFET N-CH 60V 30A D-PAK TO-252-3, DPak (2 Leads + Tab), SC-63 PowerTrench® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active TO-252 N-Channel 60V 1110pF @ 25V 3.2W (Ta), 50W (Tc) 30A (Tc) 6V, 10V 27 mOhm @ 9A, 10V 4V @ 250µA 32nC @ 10V ±20V -
FDPF12N35
RFQ
ON Semiconductor MOSFET N-CH 350V 12A TO-220F TO-220-3 Full Pack UniFET™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-220F N-Channel 350V 1110pF @ 25V 31.3W (Tc) 12A (Tc) 10V 380 mOhm @ 6A, 10V 5V @ 250µA 25nC @ 10V ±30V -
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